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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP82N04PDG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP82N04PDG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP82N04PDG-E1-AY
NP82N04PDG-E2-AY
FEATURES
? Super low on-state resistance
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape
800 p/reel
PACKAGE
TO-263 (MP-25ZP)
typ. 1.5 g
(TO-263)
R DS(on)1 = 3.5 m Ω MAX. (V GS = 10 V, I D = 41 A)
R DS(on)2 = 8.0 m Ω MAX. (V GS = 4.5 V, I D = 41 A)
? Low C iss C iss = 6000 pF TYP.
ABSOLUTE MAXIMUM RATINGS (T A = 25 ° C)
Drain to Source Voltage (V GS = 0 V)
Gate to Source Voltage (V DS = 0 V)
Drain Current (DC) (T C = 25 ° C)
V DSS
V GSS
I D(DC)
40
± 20
± 82
V
V
A
Drain Current (pulse)
Note1
I D(pulse)
± 328
A
Total Power Dissipation (T C = 25 ° C)
Total Power Dissipation (T A = 25 ° C)
Channel Temperature
Storage Temperature
P T1
P T2
T ch
T stg
143
1.8
175
? 55 to +175
W
W
° C
° C
Repetitive Avalanche Current
Repetitive Avalanche Energy
Note2
Note2
I AR
E AR
43
185
A
mJ
Notes 1. PW ≤ 10 μ s, Duty Cycle ≤ 1%
2. T ch ≤ 150°C, V DD = 20 V, R G = 25 Ω , V GS = 20 → 0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R th(ch-C)
R th(ch-A)
1.05
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18396EJ1V0DS00 (1st edition)
Date Published September 2006 NS CP(K)
Printed in Japan
2006
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